The R8002CND3FRA is a high-voltage N-channel power MOSFET with an 800V drain-source breakdown voltage and 2A continuous drain current. Designed for switch-mode power supplies, it features low on-resistance, fast switching speed, and Pb-free RoHS compliance. Its compact DPAK package offers excellent thermal performance with thermal resistances of 1.80°C/W junction-to-case and 100°C/W junction-to-ambient. Suitable for high-voltage switching applications, it includes avalanche energy and energy derating curves, ensuring reliable operation under transient conditions. The device is qualified per AEC-Q101 standards, ideal for automotive and industrial power systems.
On-Resistance (Rds(on)): 33-43Ω at Vag=10V, Ip=1.0A
Gate Resistance: 76Ω at 1MHz
Package: TO-252 (DPAK)
Maximum Junction Temperature: 150°C
Storage Temperature Range: -55°C to +150°C
Buy the Buy ROHM R8002CND3FRA Power MOSFET Part Number R8002CND3FRA Online
Purchase the ROHM R8002CND3FRA power MOSFET online today to ensure high-voltage switching capabilities, low on-resistance, fast switching speeds, and compliance with RoHS standards. Ideal for power supplies, industrial power modules, and automotive systems, this device offers robust thermal performance with a compact DPAK package. With a breakdown voltage of 800V and a continuous drain current of 2A, it is built for durability and efficiency. Buy now to upgrade your power circuit designs with a trusted quality component, simplifying assembly and improving overall system reliability.
Get ROHM R8002CND3FRA power MOSFET today—designed for high-voltage switching, low on-resistance, and reliable operation in power supply systems.
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