The RF1001NS2DFH is a super fast recovery diode featuring silicon epitaxial planar construction, designed for high-speed rectification in power circuits. It offers a repetitive peak reverse voltage of 200 V, a forward voltage of 0.85–0.93 V at 5A, and a reverse recovery time of 15–25 ns, making it ideal for high-frequency applications. Constructed in a TO263S (D2PAK) package, this diode supports operating temperatures from -55°C to +150°C and handles a maximum average current of 10 A, ensuring reliability and efficiency in industrial and electronic power systems.
ROHM RF1001NS2DFHTL Fast Recovery Diode Specifications:
Repetitive Peak Reverse Voltage: 200 V
Direct Reverse Voltage: 200 V
Average Current: 10 A at 60Hz
Non-repetitive Forward Surge Current: 80 A
Operating Junction Temperature: -55°C to +150°C
Forward Voltage: 0.85–0.93 V at 5A
Reverse Current at 200 V: 0.01 pA
Reverse Recovery Time: 15–25 ns
Thermal Resistance Junction to Case: 3.0 °C/W
Package: TO263S (D2PAK)
Device Structure: Silicon epitaxial planar type
Maximum Storage Temperature: -55°C to +150°C
Buy the ROHM RF1001NS2DFH – Reliable Fast Recovery Diode for Industrial Applications
Elevate your power circuitry with the ROHM RF1001NS2DFH fast recovery diode, featuring a 200V peak reverse voltage, low forward voltage, and quick recovery time. Its silicon epitaxial planar construction ensures high efficiency and reliability, making it suitable for high-frequency rectification in industrial electronics. With a package designed for thermal stability and an operating range from -55°C to +150°C, this diode supports demanding power applications. Purchase online now to improve your system performance with proven quality.
Order your ROHM RF1001NS2DFH series fast recovery diode today and ensure high-speed rectification with low switching losses for your industrial power systems.
Frequently Asked Questions
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You can click on the BUY or RFQ button to purchase RF1001NS2DFHTL from an authorized ROHM distributor.
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