The R8002KND3TL1 is a high-voltage, low on-resistance power MOSFET designed for efficient switching applications. With an 800V drain-source voltage and 1.6A continuous drain current, it features fast switching capabilities, a body diode, and RoHS compliant lead plating. Its thermal characteristics include a junction-to-case resistance of 41°C/W and a junction-to-ambient resistance of 147°C/W, making it suitable for power supply and inverter circuits. The device can withstand pulsed currents up to 48A and avalanche energy of 4mJ, ensuring reliable operation under transient conditions.
ROHM R8002KND3TL1 High Voltage Power MOSFET Specifications:
Drain - Source Voltage: 800 V
Continuous Drain Current: 1.6 A
Pulsed Drain Current: 48 A
Gate - Source Voltage: ±30 V
Avalanche Current, single pulse: 0.3 A
Power Dissipation: 30 W
Junction Temperature Range: -55 to +150°C
Thermal Resistance, junction to case: 41°C/W
Thermal Resistance, junction to ambient: 147°C/W
Soldering Temperature (wave soldering for 10s): 265°C
Gate - Source Threshold Voltage: 3.5 V (max: 45 V)
On-Resistance: 35–42 Ω
Reverse Recovery Time: 180 ns
Total Gate Charge: 75 nC
Body Diode Reverse Recovery Charge: 900 nC
Buy the Buy ROHM R8002KND3TL1 Power MOSFET Part Number R8002KND3 Online
Purchase the ROHM R8002KND3TL1 high-voltage power MOSFET online today. Engineered for efficient switching with 800V drain-source voltage and 1.6A continuous current, it features fast switching, a body diode, and is RoHS compliant. Ideal for power supply, inverter, and motor control applications, this device offers low on-resistance and excellent thermal performance. Reliable and built for demanding electronic systems, it ensures durability and high efficiency in transient and static operation. Order now to enhance your power circuit designs with this robust, high-voltage MOSFET.
Get ROHM R8002KND3TL1 today—built for high-voltage switching and long-lasting durability in power electronics applications.
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