The RALO35P01 is a compact P-channel MOSFET designed for low-voltage drive applications. Featuring low on-resistance and small form factor, it is ideal for switching and power control circuits. With a drain-source voltage of -12V and continuous drain current of 3.5A, this MOSFET ensures reliable performance in high-speed switching tasks. Its low gate threshold voltage and low gate-source leakage enhance efficiency. Suitable for modern electronic and power management circuits, it offers thermal stability up to 150°C and can be mounted on ceramic boards for optimal heat dissipation.
Static drain-source on-state resistance: 40 to 82 mΩ
Gate capacitance: 2700 pF
Source-drain body diode voltage: -1.2V
Mounting on ceramic board recommended for optimal performance
Buy the ROHM Series RALO35P01 P-Channel MOSFET: RALO35P01
Purchase the ROHM Series RALO35P01 P-Channel MOSFET online today and enhance your electronic circuits with a compact, low-resistance, high-current switching device. This MOSFET offers excellent thermal stability, low gate threshold, and high efficiency for switching applications. Its small package size makes it ideal for space-constrained designs, while the thermal characteristics ensure reliable operation even at elevated temperatures. Perfect for power management, switching circuits, and control systems requiring fast response and low power loss, it’s the dependable choice for modern electronics.
Order your ROHM Series RALO35P01 P-Channel MOSFET today and give your projects the dependable quality they deserve, ensuring reliable switching and power management.
Frequently Asked Questions
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You can click on the BUY or RFQ button to purchase RAL035P01TCR from an authorized ROHM distributor.
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