The RB238T1008Z is a high-reliability, low forward voltage Schottky barrier diode designed for switching power supply applications. Constructed using silicon epitaxial planar technology, it features a common cathode type, making it suitable for efficient rectification with minimal energy loss. This diode is AEC-Q101 qualified, ensuring automotive-grade quality and durability. Its key specifications include a reverse voltage of 100V, a repetitive peak reverse voltage of 110V, and an average forward current of 40A, making it ideal for high-current switching devices needing robust performance and thermal stability.
Repetitive peak reverse voltage Vem: 110 V at 50% duty cycle
Reverse voltage VR: 100 V
Average forward rectified current Ifo: 40 A
Operating junction temperature Ti: -150°C
Storage temperature Tstg: -55°C to +150°C
Forward voltage Ve: 0.86 V at 20A
Reverse current Ip: 20 BA at 100V
Thermal resistance Junction to case: 2 °C/W
Construction: Silicon epitaxial planar
Certification: AEC-Q101 qualified
Package: TO220FN
Dimensions: Specific dimensions provided in datasheet
Maximum peak surge current: 100 A
Peak transient temperature not exceeding specified limits
Buy the Buy ROHM RB238T1008Z Schottky Barrier Diode Part Number RB238T1008Z Online
Purchase the ROHM RB238T1008Z diode today effortlessly online and ensure your power supply systems operate with exceptional efficiency. This high-reliability diode offers low forward voltage, high surge current capacity, and proven automotive-grade quality, making it ideal for switching power supplies needing robust and durable rectification. Secure your order now to benefit from fast shipping, genuine parts, and technical support, seamlessly integrating this high-performance diode into your electronics designs for optimal results and long-term reliability.
Buy ROHM RB238T1008Z diode now and experience unmatched reliability and high current switching performance in your power electronics applications.
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