The RFN10BGE3S is a high-performance fast recovery diode designed for general rectification applications. It features a silicon epitaxial planar type construction, low switching loss, and high overload current capacity. With a repetitive peak reverse voltage of 350V and a forward surge current of 80A, it is suitable for efficient power management in electronic circuits. Operating at junction temperatures up to 150°C, this diode offers reliable performance with a reverse recovery time of 22-30 ns, making it ideal for switching and rectification tasks in diverse electronic devices.
Discover the reliable performance of the ROHM RFN10BGE3S fast recovery diode. With a voltage rating of 350V and a surge current capacity of 80A, it ensures efficient power rectification in various electronic devices. Designed with a silicon epitaxial planar structure, this diode offers low switching losses and quick recovery time of 22-30 ns, making it ideal for high-frequency switching applications. Its operational temperature range extends up to 150°C, assuring stability and durability for industrial and consumer electronics projects. Purchase online today for guaranteed quality and performance.
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You can download the RFN10BGE3STL datasheet or visit the ROHM website for support.
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