The RFN10NS3S is a high-performance silicon epitaxial planar diode designed for general rectification applications. It features low switching loss and high current overload capacity, making it suitable for fast switching power supplies and other electronic circuits requiring efficient rectification. The diode boasts a repetitive peak reverse voltage of 350 V and a forward voltage of approximately 1.25 to 1.5 V at 10 A. With a junction temperature rating up to 150°C, it ensures reliability in demanding environments. Its construction allows for high surge peak current of up to 400 A and exceptional thermal resistance, making it a robust choice for various industrial and electronic applications.
Purchase the ROHM RFN10NS3S diode online today and ensure efficient power rectification for your industrial or electronic projects. With a maximum reverse voltage of 350 V and a forward voltage of 1.25 to 1.5 V at 10 A, it offers reliable performance. Its high surge peak current of 400 A and low reverse current make it ideal for demanding applications. Designed with silicon epitaxial planar construction, it guarantees durability, quick response times, and high thermal stability, making it perfect for power supplies, rectifiers, and other electronic systems requiring fast switching and high overload capacity.
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You can download the RFN10NS3STL datasheet or visit the ROHM website for support.
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