The RHK005N03FRA is a silicon N-channel MOSFET designed for switching applications, offering low on-resistance and high-speed switching capabilities. It features a drain-source voltage of 30V, a gate-source voltage of 420V, and a continuous drain current up to 500mA. This device is suitable for various electronic switching tasks, with a maximum power dissipation of 200mW, and operates reliably within a temperature range of -55°C to 150°C. Its compact SMT package and robust electrical characteristics make it ideal for efficient power management and switching in industrial and consumer electronics.
Upgrade your electronic systems with the ROHM Series RHK005N03FRA N-channel MOSFET. Designed for efficient power switching, it features a maximum drain-source voltage of 30V and supports continuous drain currents up to 500mA. Its low on-resistance ensures minimal power loss, while high-speed switching capabilities improve overall efficiency. Compact and solidly built with a robust SMT package, this device is perfect for industrial automation, consumer electronics, and power management applications. Purchase online today for dependable, high-performance switching solutions.
You can click on the BUY or RFQ button to purchase RHK005N03FRAT146 from an authorized ROHM distributor.
You can download the RHK005N03FRAT146 datasheet or visit the ROHM website for support.
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