The RSQ025P03HZG is a small signal N-channel MOSFET designed for high-speed switching applications. It features low on-resistance, built-in gate-source protection diode, and is housed in a compact TSMT6 surface-mount package. Qualified under AEC-Q101, it offers excellent electrical performance with a drain-source voltage of -30V, continuous drain current of 42.5A, and a power dissipation of 1.25W. Its high junction temperature endurance and RoHS compliance make it suitable for automotive and industrial uses, ensuring reliable operation in harsh environments.
ROHM RSQ025P03HZGTR Small Signal MOSFET Specifications:
Drain-Source Voltage: -30V
Continuous Drain Current: 42.5A
Pulsed Drain Current: 10A
Power Dissipation: 1.25W
Max Junction Temperature: 150°C
Operating Temperature Range: -55°C to +150°C
Gate-Source Voltage: ±20V
Gate Threshold Voltage: -1.0V to -2.5V
On-Resistance (Rds(on)): 120 to 165 mΩ at Vas = -4.5V, Ip = -2.54A
Gate Resistance: 11Ω
Body Diode Forward Voltage: 1.2V at -1A
Thermal Resistance, Junction-Ambient: 100°C/W
RoHS compliant, Pb-free, AEC-Q101 qualified
Buy the Voss Series Switch MOSFET: RSQ025P03HZGTR
Purchase the Voss Series RSQ025P03HZGTR online today for your high-speed switching needs. This reliable, compact MOSFET features low on-resistance, built-in protection diode, and excellent thermal stability, making it ideal for automotive and industrial applications. With a drain-source voltage of -30V, high drain current capacity of 42.5A, and RoHS compliance, it ensures optimal performance in challenging environments. Get it now to benefit from quick delivery and elevate your circuit design with top-tier quality.
Order your Voss Series RSQ025P03HZGTR today and enhance your electronic projects with a reliable, high-performance small signal MOSFET designed for demanding switching applications.
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