The SCT3030KL is a high-voltage N-channel silicon carbide (SiC) power MOSFET designed for efficient power switching applications. Featuring a drain-source voltage of 1200V, low on-resistance of 30mΩ, and fast switching capabilities, it is ideal for solar inverters, DC/DC converters, motor drives, and induction heating systems. Its compact TO-247N package ensures easy installation and reliable performance. Pb-free RoHS compliant, it provides excellent thermal characteristics with junction-to-case resistance of around 0.34-0.44 °C/W, making it suitable for demanding high-power electronic circuits.
Purchase the Rohm SCT3030KL high-voltage SiC power MOSFET online today. This excellent device offers 1200V maximum drain-source voltage, low Rds(on) at 30mΩ, and fast switching speeds, making it ideal for high-power applications such as solar inverters, DC/DC converters, motor drives, and induction heating. Its robust TO-247N package ensures easy installation and durable performance. RoHS compliant and Pb-free, this MOSFET guarantees improved efficiency and reliable operation for demanding industrial and electronic projects. Get your high-performance power device now!
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You can download the SCT3030KLGC11 datasheet or visit the ROHM website for support.
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