The UMZC6.8N is an ESD protection diode with a common anode configuration, designed for high reliability and compact form factor. Made with silicon epitaxial planar structure, it features a small mold type size UMD3, and offers a zener voltage range from 6.47 to 7.14 V at 5mA, with a maximum reverse current of 0.50 HA at 3.5V. It is suitable for protecting electronic circuits against electrostatic discharges, with a power dissipation of 200mW, junction temperature up to 150°C, and storage capabilities from -55°C to +150°C.
Capacitance between terminals: 3 pF at Vp=0V, f=1MHz
Construction: Silicon epitaxial planar
Dimensions: Land size approximately 0.8 mm MIN, mold type UMD3
JEDEC standard: SOT-323
Material: Silicon epitaxial planar with small mold type construction
Buy the Buy ROHM UMZC6.8N Part Number UMZC68NT106 Online
Secure your electronic circuitry with the ROHM UMZC6.8N ESD protection diode. Designed for high reliability in protecting against static discharges, this compact silicon planar device offers a zener voltage range of 6.47 to 7.14V, with a power dissipation of 200mW. Suitable for applications requiring robust electrostatic protection, it features a small mold type UMD3 footprint, temperature tolerance up to 150°C, and low capacitor value of 3pF for high-speed performance. Buy online today for optimal circuit safeguarding.
Buy ROHM UMZC6.8N diode now and ensure reliable electrostatic discharge protection with compact design and high-efficiency features.
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