STMICROELECTRONICS EVALSTGAP2SICSC High Power Gate Driver Module
The STGAP2SiCSC is an isolated single gate driver designed for high-power inverter applications utilizing SiC MOSFET switches. It features 4 A current drive capability, rail-to-rail outputs, and products suited for voltage up to 1200 V. The device incorporates protection functions including UVLO and thermal shutdown, with dual input pins for control polarity and HW interlocking. Onboard isolated DC-DC converters facilitate optimized gate driving voltages, making it ideal for industrial motor drives and power inverters. The evaluation board offers easy access for performance testing and adjustment under varied operating conditions.
Dual input pins for control polarity and HW interlocking
Suitable for half-bridge topologies
Designed for SiC MOSFET applications
Supports voltage ratings up to 1200 V
Board features accessible and modifiable components
Isolation: 6,000 V galvanic isolation
Includes Miller CLAMP for spike suppression
Buy the Buy STMicroelectronics STGAP2SiCSC Part Number EVALSTGAP2SICSC Online
Purchase the STMicroelectronics STGAP2SiCSC evaluation board today to easily test and optimize your high-voltage inverter designs. This compact, accessible platform supports voltages up to 1200 V, enabling high-current SiC MOSFET switching with features like UVLO, thermal shutdown, and Miller CLAMP protection. With onboard isolated DC-DC converters, it offers flexible gate drive voltage configurations, ideal for motor drives and industrial power systems. Enhance your development process with this reliable, easy-to-use evaluation tool and achieve superior performance in your power electronics projects.
Buy STMicroelectronics STGAP2SiCSC EVALSTGAP2SICSC now and experience unmatched reliability and high power gate driving performance for industrial inverter systems.
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