The STF28NM50N is an N-channel Power MOSFET developed using second-generation MDmesh™ technology, offering very low on-resistance and gate charge. Suitable for high-efficiency switching applications, it features a drain-source voltage of 500 V and a continuous drain current of 21 A, with multiple package options including TO-220, TO-220FP, TO-247, and D?PAK. Designed for demanding industrial environments, this MOSFET delivers excellent performance with avalanche testing, low input capacitance, and robust thermal characteristics, making it ideal for modern power conversion and switching systems.
Available packages: TO-220, TO-220FP, TO-247, D?PAK
Avalanche current: 75 A
Single pulse avalanche energy: 300 mJ
Buy the Voss Rpscon Power MOSFET – Reliable Switching for Industrial Applications
Enhance your power switching systems with the Voss Rpscon STF28NM50N N-channel Power MOSFET, offering 500 V drain-source voltage, 21 A continuous drain current, and ultra-low Rds(on) for superior efficiency. Suitable for industrial power converters and high-demand switching applications, this device features avalanche testing, multiple package options including TO-220, TO-247, and D?PAK, and excellent thermal performance. Equip your projects with this robust, high-performance MOSFET to ensure reliable, efficient operation in demanding environments.
Buy Voss Rpscon STF28NM50N now and experience unmatched reliability, high efficiency, and robust performance in demanding power switching environments.
Frequently Asked Questions
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You can download the STF28NM50N datasheet or visit the STMICROELECTRONICS website for support.
Who is the manufacturer of STF28NM50N?
STMICROELECTRONICS
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