The MASTERGAN5 is an advanced power system-in-package that integrates a gate driver and two enhancement-mode GaN power transistors. Each GaN transistor features a 650 V drain-source blocking voltage and a RDS(ON) of 450 mΩ. The high-side embedded gate driver can be powered easily through an integrated bootstrap diode. The device includes UVLO protection on both the high and low sides to prevent inefficient or unsafe operation, along with an interlocking function to avoid cross-conduction. Its extended input range allows easy interfacing with microcontrollers, DSPs, or Hall effect sensors. Operating in the industrial temperature range from -40°C to 125°C, the compact 9x9 mm QFN package makes it suitable for various high-efficiency power applications. Additional features include reverse current capability, zero reverse recovery loss, accurate internal timing, and compatibility with input voltages from 3.3V to 15V with hysteresis and pull-down. It also offers over-temperature protection, simplifies the bill of materials, and enables flexible, fast, and straightforward design processes.
Purchase the STMicroelectronics MASTERGAN5 online today—designed for high-power density and efficiency in power converters. This compact device integrates a gate driver with two GaN power transistors rated at 650 V each, offering UVLO, over-temperature protection, and zero reverse recovery loss. Its extended input range simplifies interfacing with microcontrollers and sensors, ensuring flexible and fast deployment in high-voltage switching applications. The 9x9 mm QFN package facilitates easy PCB integration and thermal management, making it ideal for innovative power electronics projects seeking durability and superior performance.
You can click on the BUY or RFQ button to purchase MASTERGAN5 from an authorized STMICROELECTRONICS distributor.
You can download the MASTERGAN5 datasheet or visit the STMICROELECTRONICS website for support.
STMICROELECTRONICS