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STMICROELECTRONICS SCT1000N170 Silicon Carbide Power MOSFET

This silicon carbide Power MOSFET offers high-voltage switching with 1700 V drain-source breakdown voltage and 7A continuous drain current. Encased in a HiP247 package, it features rapid switching capabilities, a robust body diode, low input capacitance, and excellent thermal capacity, making it ideal for high-efficiency power supplies, server auxiliary power, and switch mode power applications. Its innovative SiC technology ensures superior thermal performance and reliability in high-temperature environments, supporting high power density and high-frequency operation in demanding industrial and electronic systems.

Authorized Distributors
Source:Newark
Part No:SCT1000N170
Stock:40
Inv Date:06-11-2026
Price: Unit price: $10.75
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Source:DigiKey
Part No:SCT1000N170
Stock:0
Inv Date:06-11-2026
Price: Unit price: $9.51
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Part No:SCT1000N170
Stock:499
Inv Date:06-12-2026
Price: Unit price: $9.51
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Part No:SCT1000N170
Stock:0
Inv Date:06-11-2026
Price: Unit price: $4.35
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Source:Arrow EU
Part No:SCT1000N170
Stock:150
Inv Date:06-12-2026
Price: N/A
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STMICROELECTRONICS SCT1000N170 Silicon Carbide Power MOSFET Specifications:

  • Drain-source voltage: 1700 V
  • Gate-source voltage: 10 to 25 V
  • Continuous drain current at 25°C: 7 A
  • Pulsed drain current: 20 A
  • Power dissipation at 25°C: 96 W
  • Storage temperature range: -55°C to 200°C
  • Operating junction temperature: -55°C to 200°C
  • Thermal resistance junction-case: 1.83 °C/W
  • Thermal resistance junction-ambient: 50 °C/W
  • Input capacitance (Ciss): 13300 pF
  • Output capacitance (Coss): 13 pF
  • Reverse transfer capacitance (Crss): 34 pF
  • Gate input resistance: 96 Ω
  • Total gate charge: 1335 nC
  • Switching energy (turn-on): 17 mJ, (turn-off): 65 mJ
  • Reverse recovery time: 220 ns
  • Diode forward voltage: not specified
  • Reverse recovery charge: 92 nC

Buy the Buy STMicroelectronics SCT1000N170 Power MOSFET Part Number SCT1000N170 Online

Purchase the STMicroelectronics SCT1000N170 silicon carbide Power MOSFET online today for high-voltage, high-efficiency power switching. This device’s 1700 V drain-source voltage, 7A continuous current, and advanced SiC technology enable exceptional thermal performance, fast switching, and high reliability. Its HiP247 package ensures excellent thermal dissipation, suitable for industrial, server, and power supply applications requiring high power density and high-temperature operation. Order now to enhance your high-power electronic systems with this robust, high-performance MOSFET designed for demanding environments.

Get STMicroelectronics SCT1000N170 today—built for high-voltage switching, rapid performance, and reliable thermal management.

Frequently Asked Questions

Where can I buy STMICROELECTRONICS SCT1000N170?

You can click on the BUY or RFQ button to purchase SCT1000N170 from an authorized STMICROELECTRONICS distributor.

How do I troubleshoot issues or seek technical support for part SCT1000N170?

You can download the SCT1000N170 datasheet or visit the STMICROELECTRONICS website for support.

Who is the manufacturer of SCT1000N170?

STMICROELECTRONICS

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