The STB12NM50T4 is an N-channel power MOSFET with a voltage rating of 550V, low Rds(on) of less than 0.35Ω, and a maximum continuous drain current of 12A. It features high dv/dt and avalanche capabilities, making it suitable for switching applications. The device is housed in a TO-220 package with mechanical options including DPAK and TO-220FP, ensuring robust performance and efficient thermal management. Designed with proprietary MDmesh™ technology, it offers outstanding dynamic performance, high manufacturing yields, and is 100% avalanche tested for reliability.
STMICROELECTRONICS STB12NM50T4 Power MOSFET Specifications:
Voltage Rating: 550V
Drain Current (Continuous): 12A
Drain Current (Pulsed): 48A
Maximum Power Dissipation: 160W
Rds(on): <0.35Ω at Vgs=10V
Gate-Source Voltage: ±30V
Gate Threshold Voltage: 3-5V
Package Types: TO-220, DPAK, TO-220FP
Thermal Resistance Junction-Case Max: 0.78°C/W
Thermal Resistance Junction-Ambient Max: 62.5°C/W
Repetitive Avalanche Current: 6A
Reverse Recovery Charge: 2.23μC
Gate Charge (Total): 28-39nC
Safe Operating Area: Includes high dv/dt and avalanche.
Buy the Voss Series Power MOSFET: STB12NM50T4
Purchase the Voss Series Power MOSFET STB12NM50T4 online today for reliable high-voltage switching performance. With a voltage rating of 550V and a continuous drain current of 12A, this MOSFET offers low Rds(on) of less than 0.35Ω, high dv/dt, and avalanche capabilities. Its robust TO-220 package ensures excellent thermal management and durability. Suitable for industrial, power management, and switching applications, this device is 100% avalanche tested and built with advanced MDmesh™ technology to ensure outstanding dynamic performance and high manufacturing yields. Buy now for efficient power control solutions.
Order your Voss Series Power MOSFET STB12NM50T4 today and give your switching applications the dependable quality they deserve.
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STMICROELECTRONICS
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