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STMICROELECTRONICS STD5N60DM2 High-Voltage Power MOSFET

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 series with a 600 V rating, low on-resistance, and fast-recovery body diode, suitable for high-efficiency converters, bridge topologies, and ZVS phase-shift applications. It features extremely low gate charge, input capacitance, and high dv/dt ruggedness, making it ideal for switching power supplies, motor drives, and solar inverters. The DPAK package ensures reliable performance in demanding environments with thermal stability and robust avalanche characteristics.

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Source:Newark
Part No:STD5N60DM2
Stock:1286
Inv Date:06-11-2026
Price: Unit price: $1.37
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Source:DigiKey
Part No:STD5N60DM2
Stock:335
Inv Date:06-11-2026
Price: Unit price: $1.44
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Part No:STD5N60DM2
Stock:1226
Inv Date:06-12-2026
Price: Unit price: $1.44
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Part No:STD5N60DM2
Stock:0
Inv Date:06-11-2026
Price: Unit price: $0.4
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STMICROELECTRONICS STD5N60DM2 High-Voltage Power MOSFET Specifications:

  • Ves (Drain-Source Breakdown Voltage): 600 V
  • Id (Continuous Drain Current at 25°C): 3.5 A
  • Id (Continuous Drain Current at 100°C): 2 A
  • Id (Pulsed Drain Current): 14 A
  • Pd (Total Dissipation at 25°C): 45 W
  • dV/dt (Peak Diode Recovery Voltage Slope): 40 V/µs
  • dv/dt (MOSFET dv/dt Ruggedness): 40 V/µs
  • Tstg (Storage Temperature Range): -55°C to 150°C
  • Tj (Operating Junction Temperature Range): -55°C to 150°C
  • Thermal Resistance Junction-Case: 2.78 °C/W
  • Thermal Resistance Junction-Heatsink: 50 °C/W
  • Avalanche Repetitive Current: 1 A
  • Single Pulse Avalanche Energy: 132 mJ
  • Gate Threshold Voltage (Vgs): 3 V to 5 V
  • Gate Charge (Qg): 5.3 nC
  • Output Capacitance (Coss): 12 pF
  • Input Capacitance (Ciss): 214 pF
  • Reverse Transfer Capacitance (Crss): 3.5 pF
  • Package: DPAK (TO-252) type A

Buy the STMicroelectronics STDS5N60DM2 – Reliable MOSFET for Industrial Applications

Experience superior switching performance with the STMicroelectronics STDS5N60DM2 high-voltage MOSFET. Designed for demanding industrial applications, it features a 600 V breakdown voltage, extremely low on-resistance, and a fast-recovery diode library, enabling high-efficiency power conversion. Its DPAK package provides excellent thermal stability and Ruggedness against high dv/dt conditions. Ideal for inverter circuits, switching power supplies, and motor drives, this MOSFET ensures reliable operation, robust thermal management, and extended device lifespan in challenging environments.

Get STMicroelectronics STDS5N60DM2 today—built for precision and long-lasting durability in high-voltage switching environments.

Frequently Asked Questions

Where can I buy STMICROELECTRONICS STD5N60DM2?

You can click on the BUY or RFQ button to purchase STD5N60DM2 from an authorized STMICROELECTRONICS distributor.

How do I troubleshoot issues or seek technical support for part STD5N60DM2?

You can download the STD5N60DM2 datasheet or visit the STMICROELECTRONICS website for support.

Who is the manufacturer of STD5N60DM2?

STMICROELECTRONICS

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