STMICROELECTRONICS STF12N65M2 High-Voltage Power MOSFET
This N-channel Power MOSFET is developed using ST's MDmesh M2 technology, offering low on-resistance and optimized switching for high-efficiency converters. With a voltage rating of 650 V and a maximum continuous drain current of 8A, it features extremely low gate charge, excellent output capacitance, and is 100% avalanche tested. Suitable for switching applications, the TO-220FP package ensures reliable performance in demanding environments, making it ideal for high-power switching and inverter circuits.
Switching times: rise time approx. 34 ns, fall time approx. 9 ns
Package: TO-220FP
Maximum power dissipation: 25 W
Temperature range: -55°C to 150°C
Thermal resistance junction-case: 5°C/W
Avalanche energy: 250 mJ
Insulation withstand voltage: 25 kV RMS
Buy the STMicroelectronics Series M2 Switching: STF12N65M2
Purchase the STMicroelectronics STF12N65M2 today for reliable high-voltage switching in power supplies and inverter circuits. Designed with low gate charge and excellent output capacitance, this N-channel MOSFET ensures high efficiency and robust performance. Suitable for demanding applications requiring up to 650 V, in a compact TO-220FP package, it provides optimal thermal performance with a maximum power dissipation of 25 W. Whether designing industrial equipment or high-power converters, this device offers the durability and efficiency necessary for success. Order now for immediate availability and fast delivery!
Get STMicroelectronics STF12N65M2 today—built for high-voltage switching and low on-resistance in demanding power conversion applications.
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You can download the STF12N65M2 datasheet or visit the STMICROELECTRONICS website for support.
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STMICROELECTRONICS
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