This high-performance N-channel Power MOSFET features MDmesh II Plus™ technology, offering extremely low gate charge and low Rds(on). With a voltage rating of 600 V and a continuous drain current of 13 A, it is designed for demanding high-efficiency power conversion applications such as LLC and resonant converters. Encased in a TO-220FP package, it is 100% avalanche tested, zener-protected, and optimized for switching performance. Its vertical structure provides low on-resistance, making it ideal for high-power, high-speed switching environments requiring reliability and durability.
Maximum Operating Junction Temperature: limited by junction specs
Package: TO-220FP
Peak Diode Recovery Voltage Slope: 15 V/μs
Avalanche Current: 3 A (repetitive), 52 A (pulsed)
Surge Current: 130 A (Ds), 100 A (Vgs=600 V)
Avalanche Energy: 138 mJ at 25°C
Buy the Buy STMicroelectronics STF18N60M2 Power MOSFET Part Number STF18N60M2 Online
Enhance your power electronics with STMicroelectronics STF18N60M2, a high-performance N-channel MOSFET rated at 600 V and 13 A. Engineered with MDmesh II Plus™ technology, it ensures low gate charge, minimal on-resistance, and robust switching capabilities. Perfect for demanding applications like LLC and resonant converters, this TO-220FP package device offers high reliability and efficiency. Order online today and improve your systems' performance with this durable and low-loss power transistor, suitable for high-power switching environments.
Get STMicroelectronics STF18N60M2 today—designed for high-efficiency switching, low on-resistance, and reliable high-power operation.
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