The product comprises N-channel Power MOSFETs designed for high-efficiency switching applications. Developed with second-generation MDmesh™ technology, these devices feature a vertical structure for low on-resistance and gate charge, making them suitable for demanding converters. Available in D2PAK and TO-220 packages, they are 600 V, 0.135 Ω typ. on-resistance, and 20 A continuous drain current rated devices, tested for avalanche robustness and optimized for high-speed switching, ensuring reliability in industrial and power management systems.
STMICROELECTRONICS STF26NM60N Power MOSFET Specifications:
Drain-source voltage: 600 V
Gate-source voltage: +30 V
Drain current (continuous at 25°C): 20 A
Drain current (pulsed): 80 A
Total dissipation at 25°C: 140 W
Thermal resistance junction-case: 0.89 °C/W
Thermal resistance junction-ambient: 62.5 °C/W
Avalanche energy: 610 mJ
Gate threshold voltage: 2-4 V
On-resistance (Ves=10V): 0.135 Ω typ.
Input capacitance: 1800 pF
Output capacitance: 115 pF
Switching times: Rise time: 2 ns, Fall time: 50 ns
Package types: D2PAK (TO-263), TO-220
Operating junction temperature: -55 to 150°C
Buy the Buy STMicroelectronics Power MOSFET Part Number STF26NM60N Online
Elevate your power management systems with the Power MOSFET designed for high-efficiency switching. This device features low on-resistance and gate charge, rated at 600 V and 20 A, ensuring reliable operation under demanding conditions. Available in D2PAK and TO-220 packages, it is ideal for industrial, inverter, and converter applications. With avalanche ruggedness and optimized switching times, purchase online now to ensure your project's success with top-tier performance and durability.
Buy STMicroelectronics STF26NM60N now and experience unmatched reliability and performance for demanding high-efficiency switching applications.
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