The STP9NM60N is an N-channel power MOSFET designed for high-efficiency switching applications. Built with second-generation MDmesh™ technology, it offers one of the lowest on-resistance and gate charge values, making it suitable for demanding converters. The device features a maximum drain-source voltage of 600 V, drain current of 65 A, and total dissipation of 70 W. Its package options include TO-220, TO-220FP, DPAK, and D2PAK, with mechanical dimensions tailored for robust installation and thermal management in industrial and power electronics circuits.
Switching Times: Turn-on delay 28 ns, Rise time 23 ns, Turn-off delay 50 ns, Fall time 26.7 ns
Gate Charge (Qg): 17.4 nC
Gate Threshold Voltage (Vgs th): 2–4 V
Rds(on): 0.63–0.74 Ω
Buy the Buy STMicroelectronics Power MOSFET Part Number STP9NM60N Online
Purchase the STMicroelectronics STP9NM60N power MOSFET online now. Featuring a maximum drain-source voltage of 600 V, drain current of 65 A, low Rds(on), and excellent switching speed, this highly efficient device is ideal for power converters and high-demand switching applications. Its robust package options including TO-220, TO-220FP, DPAK, and D2PAK ensure ease of installation and thermal management in industrial electronics. Get dependable performance and quick delivery directly from authorized distributors.
Order your STMicroelectronics STP9NM60N power MOSFET today and enhance your high-voltage switching projects with reliable, low-resistance components.
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