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STMICROELECTRONICS STP9NM60N Power MOSFET

The STP9NM60N is an N-channel power MOSFET designed for high-efficiency switching applications. Built with second-generation MDmesh™ technology, it offers one of the lowest on-resistance and gate charge values, making it suitable for demanding converters. The device features a maximum drain-source voltage of 600 V, drain current of 65 A, and total dissipation of 70 W. Its package options include TO-220, TO-220FP, DPAK, and D2PAK, with mechanical dimensions tailored for robust installation and thermal management in industrial and power electronics circuits.

Authorized Distributors
Source:Newark
Part No:STP9NM60N
Stock:18
Inv Date:06-11-2026
Price: Unit price: $1.23
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Source:DigiKey
Part No:STP9NM60N
Stock:0
Inv Date:06-11-2026
Price: Unit price: $3.51
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Part No:STP9NM60N
Stock:0
Inv Date:06-12-2026
Price: Unit price: $1.19
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Part No:STP9NM60N
Stock:0
Inv Date:06-11-2026
Price: Unit price: $0.92
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Part No:STP9NM60N
Stock:0
Inv Date:06-11-2026
Price: Unit price: $1.18
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Source:Arrow EU
Part No:STP9NM60N
Stock:2000
Inv Date:06-12-2026
Price: N/A
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STMICROELECTRONICS STP9NM60N Power MOSFET Specifications:

  • Drain-Source Voltage: 600 V
  • Drain Current (I D): 65 A
  • Pulse Drain Current (I D, pulse): 26 A
  • Total Dissipation (P tot): 70 W
  • Gate-Source Voltage: ±25 V
  • Maximum Storage Temperature: -55°C to 150°C
  • Maximum Junction Temperature: 150°C
  • Thermal Resistance junction-case (RθJC): 1.79 °C/W (DPAK), 5 °C/W (TO-220)
  • Thermal Resistance junction-ambient (RθJA): 62.5 °C/W
  • Package Types: TO-220, TO-220FP, DPAK, D2PAK
  • Maximum Insulation Voltage: 2500 V (RMS)
  • Avalanche Current: 26 A
  • Single Pulse Avalanche Energy: 115 mJ
  • Switching Times: Turn-on delay 28 ns, Rise time 23 ns, Turn-off delay 50 ns, Fall time 26.7 ns
  • Gate Charge (Qg): 17.4 nC
  • Gate Threshold Voltage (Vgs th): 2–4 V
  • Rds(on): 0.63–0.74 Ω

Buy the Buy STMicroelectronics Power MOSFET Part Number STP9NM60N Online

Purchase the STMicroelectronics STP9NM60N power MOSFET online now. Featuring a maximum drain-source voltage of 600 V, drain current of 65 A, low Rds(on), and excellent switching speed, this highly efficient device is ideal for power converters and high-demand switching applications. Its robust package options including TO-220, TO-220FP, DPAK, and D2PAK ensure ease of installation and thermal management in industrial electronics. Get dependable performance and quick delivery directly from authorized distributors.

Order your STMicroelectronics STP9NM60N power MOSFET today and enhance your high-voltage switching projects with reliable, low-resistance components.

Frequently Asked Questions

Where can I buy STMICROELECTRONICS STP9NM60N?

You can click on the BUY or RFQ button to purchase STP9NM60N from an authorized STMICROELECTRONICS distributor.

How do I troubleshoot issues or seek technical support for part STP9NM60N?

You can download the STP9NM60N datasheet or visit the STMICROELECTRONICS website for support.

Who is the manufacturer of STP9NM60N?

STMICROELECTRONICS

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