The STP35N60DM2 is a high-voltage N-channel Power MOSFET with 600V drain-source voltage and a low on-resistance of 0.094Ω. It features fast recovery body diode, extremely low gate charge, and robust dv/dt ruggedness, making it ideal for high-efficiency converters, bridge topologies, and phase-shift applications. Packaged in a TO-220 form factor, this MOSFET is designed for demanding switching applications requiring high durability and performance, with a maximum drain current of 28A and a total dissipation of 210W for reliable operation in power electronic systems.
STMICROELECTRONICS STP35N60DM2 Power MOSFET Specifications:
Ves: +25 V
Drain current (continuous) at 25°C: 28 A
Drain current at 100°C: 17 A
Pulsed drain current: 112 A
Total dissipation: 210 W
Gate-source voltage: +25 V
Gate threshold voltage: 3-5 V
Static drain-source on-resistance: 0.094 Ω
Capacitance: Ciss 2400 pF, Coss 110 pF, Crs 28 pF
Gate charge: approximately 54 nC
Switching delay time: 68 ns
Turn-on time: 21.2 ns
Turn-off time: 10.7 ns
Package: TO-220
Buy the STMicroelectronics STP35N60DM2 – Reliable MOSFET for Industrial Applications
Purchase the STP35N60DM2 Power MOSFET online and enhance your power electronic systems. With its 600V drain-source voltage, low on-resistance, and fast recovery diode, this high-performance component is ideal for demanding switching applications. Its TO-220 package ensures easy installation and reliable operation, making it perfect for high-efficiency converters, bridge topologies, and phase-shift controllers. Buy now to ensure durability, efficiency, and robust performance in your power management solutions.
Get STMicroelectronics STP35N60DM2 today—built for high efficiency, low Rds(on), and rugged switching in power electronics.
Frequently Asked Questions
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How do I troubleshoot issues or seek technical support for part STP35N60DM2?
You can download the STP35N60DM2 datasheet or visit the STMICROELECTRONICS website for support.
Who is the manufacturer of STP35N60DM2?
STMICROELECTRONICS
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