This N-channel Power MOSFET features an ultra-low gate charge and a low on-resistance, making it ideal for high-efficiency switching applications. Developed using MDmesh II Plus™ technology, it offers excellent performance with a drain-source voltage of 600V and a continuous drain current of 5A at 25°C. Suitable for demanding converters, it is ruggedly tested for avalanche and protected against voltage spikes, ensuring reliability in demanding environments. Its compact TO-220FP package facilitates easy integration into various industrial and power management systems.
STMICROELECTRONICS STF7N60M2 Power MOSFET Specifications:
Vds: 600 V
Id: 5 A at 25°C
Vgs gate-source voltage: +25 V
Rds(on): 0.86 Ω (max) at Vgs=10 V
Gate Threshold Voltage: 2-4 V
Total Dissipation: 20 W
Thermal Resistance junction-case: 6.25 °C/W
Thermal Resistance junction-ambient: 62.5 °C/W
Insulation withstand voltage: 2500 V (1 s, Tc=25°C)
Avalanche current: 15 A
Pulsed drain current: 20 A
Operating junction temperature: -55°C to 150°C
Package: TO-220FP
Repetitive avalanche energy: 99 mJ
Recovery time of body diode: 275 ns
Buy the Buy STMicroelectronics STF7N60M2 Part Number STF7N60M2 Online
Purchase the STMicroelectronics STF7N60M2 Power MOSFET online to benefit from its low gate charge and high voltage capacity. Ideal for high-efficiency switching and power conversion systems, this device offers robust avalanche protection, low Rds(on), and reliable operation even in demanding environments. Its TO-220FP package simplifies integration into your circuitry. Experience seamless performance and durability in your power management applications by ordering STF7N60M2 today, ensuring optimal efficiency and high operational safety for your electronics projects.
Buy STMicroelectronics STF7N60M2 now and experience unmatched reliability and high-efficiency switching performance for demanding power applications.
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