This N-channel Power MOSFET features a high-voltage rating of 250 V, low on-resistance between 318 to 420 mΩ, and a continuous drain current of 8 A. Developed using STMicroelectronics’ STripFET process, it is ideal for high-efficiency switching applications including automotive, telecom, and computer power supplies. The device is in a compact DPAK package, 100% avalanche tested, and supports a maximum junction temperature of 175°C, ensuring reliability in demanding environments with excellent thermal performance and fast switching capabilities.
STMICROELECTRONICS STD8NF25 Power MOSFET Specifications:
Drain-source voltage: 250 V
Gate-source voltage: ±20 V
Drain current (continuous): 8 A at 25°C, 6 A at 100°C
Pulsed drain current: 32 A
Maximum power dissipation: 72 W
Operating junction temperature: -55°C to 175°C
Thermal resistance junction-case: 2.08°C/W
Thermal resistance junction-pcb: 50°C/W
Avalanche current: 8 A (non-repetitive)
Avalanche energy: rated according to SOA
Package: DPAK (TO-252), tape and reel
Gate threshold voltage: 2-4 V
On-resistance: 318-420 mΩ at Vgs=10 V
Capacitances: Ciss 500 pF, Coss up to 90 pF
Gate charge: 16 nc
Switching delay: 13 ns (turn-on), 6 ns (turn-off)
Buy the Buy STMicroelectronics STD8NF25 Power MOSFET Part Number STD8NF25 Online
Purchase the STMicroelectronics STD8NF25 Power MOSFET online to upgrade your switching circuits with a high-voltage, low Rds(on), N-channel device. Designed using advanced STripFET technology, this MOSFET offers 250 V voltage capacity, 8 A continuous current, and a low on-resistance of approximately 318 mΩ. Its DPAK package ensures easy mounting while providing excellent thermal performance and high reliability. Perfect for automotive, telecom, and computer power supplies, this component supports high-efficiency, fast switching, and robust operation for demanding technical applications.
Order your STMicroelectronics STD8NF25 high-voltage Power MOSFET today and ensure reliable, efficient switching in your automotive, telecom, or power supply projects.
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