These second-generation MDmesh™ Power MOSFETs are N-channel devices designed for high efficiency switching applications. Utilizing advanced MDmesh™ technology, they feature reduced on-resistance, low gate charge, and enhanced avalanche characteristics, making them ideal for power converters, motor drives, and other high-performance electronics. Available in various packages like DPAK, TO-220FP, TO-220, and IPAK, these MOSFETs ensure reliable operation under demanding conditions. They are avalanche tested, with high dv/dt capability, ensuring optimal performance in repetitive and pulsed power scenarios.
STMICROELECTRONICS STF7NM60N Power MOSFET Specifications:
Drain-source voltage: 600 V
Gate-source voltage: +25 V
Drain current continuous at Tc=25°C: 5 A
Drain pulsed current: 20 A
Total dissipation at Tg=25°C: 45 W
Drain-source on-resistance: 0.84 Ω
Gate threshold voltage: 2-4 V
Input capacitance: 363 pF
Reverse transfer capacitance: 14 pF
Maximum operating junction temperature: 150°C
Thermal resistance junction-case: 2.78°C/W
Thermal resistance junction-ambient: 100°C/W
Peak diode recovery voltage slope: 15 V/μs
Insulation withstand voltage: 2500 V (1s)
Single pulse avalanche energy: 9 mJ
Repetitive avalanche current: 2 A
Repetitive avalanche energy: 9 mJ
Buy the STMicroelectronics STF7NM60N – Reliable Power MOSFET for Industrial Applications
Purchase the STMicroelectronics STF7NM60N online today—engineered for high performance in switching power supplies, motor control, and industrial automation. This N-channel MOSFET offers low Rds(on), excellent avalanche specifications, and multiple package options to suit your design needs. With guaranteed reliability and compliance with environmental standards, it ensures efficient power management and longevity in your applications. Easy to integrate with proven performance, making it an essential component for high-demand electronic systems.
Get STMicroelectronics STF7NM60N today—built for precision, high efficiency, and long-lasting durability in demanding power switching applications.
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