This N-channel Power MOSFET developed using MDmesh M2 technology features low on-resistance and optimized switching characteristics, making it ideal for high-efficiency converters and switching applications. Encased in a compact TO-220FP ultra narrow leads package, it offers a drain-source voltage of 650 V, drain current up to 5 A, and excellent avalanche performance. Its low gate charge and robust design ensure reliable operation in demanding environments, suitable for power switching, industrial automation, and high-voltage applications.
Get the STMicroelectronics high-voltage Power MOSFET STFU9N65M2 in a compact TO-220FP ultra narrow leads package. This device features 650 V maximum drain-source voltage, 5 A continuous drain current, low gate charge, and excellent avalanche testing, making it ideal for demanding high-efficiency converters, switching applications, and industrial automation. Its robust design offers low on-resistance of 0.79 to 0.90 Ω, thermal resistance of 6.25 °C/W junction-case, and 62.5 °C/W junction-ambient, ensuring dependable operation under high-voltage conditions. Perfect for engineers seeking reliable, high-performance power MOSFETs online.
You can click on the BUY or RFQ button to purchase STFU9N65M2 from an authorized STMICROELECTRONICS distributor.
You can download the STFU9N65M2 datasheet or visit the STMICROELECTRONICS website for support.
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