This is a very fast N-channel PowerMESH™ IGBT designed for high-frequency switching applications up to 70 kHz. It features low on-voltage drop and robust performance for resonant or soft-switching circuits, with a collector-emitter voltage of 600 V and continuous current of 14 A. Its advanced PowerMESH™ technology guarantees a good balance between switching speed and low on-state losses, making it suitable for industrial automation, inverter circuits, and motor drives. The device comes in a DPAK (TO-252) package, ensuring reliable operation in demanding environments over a wide temperature range.
Operating junction temperature range: -55°C to +150°C
Thermal resistance junction-case: 1.78 °C/W
Thermal resistance junction-ambient: 100 °C/W
Gate threshold voltage: 3.75 V min, 5.75 V typ
Switching times: Turn-on delay 18.5 ns, rise time 8.5 ns, turn-off delay 116 ns, fall time 108 ns
Switching energy (turn-on): 95–125 pJ, (turn-off): 115–150 pJ
DPAK package dimensions: length approx. 6.00–6.20 mm, width approx. 2.20–2.40 mm, height approx. 9.35–10.10 mm
Buy the STMicroelectronics Series PowerMESH N-channel IGBT: STGD7NC60HT4
Purchase the STMicroelectronics STGD7NC60HT4 online today. This high-speed N-channel IGBT features a collector-emitter voltage of 600 V and 14 A continuous current, making it ideal for high-frequency and resonant switching applications. Its advanced PowerMESH™ technology ensures excellent switching performance, low on-state losses, and reliable operation in industrial and automation environments. The durable DPAK package simplifies installation and enhances thermal management, providing a robust solution for demanding electronic and power conversion systems.
Get STMicroelectronics STGD7NC60HT4 today—built for high-speed switching and long-lasting durability.
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