This device is a high-speed trench gate field-stop IGBT designed for very high frequency converters and industrial applications. Developed using an advanced trench gate structure, it offers a balance between conduction and switching losses. Suitable for photovoltaic inverters, uninterruptible power supplies, welding, power factor correction, and high-frequency converters, it features a maximum junction temperature of 175°C, low thermal resistance, and a safe paralleling operation due to tight parameter distribution, ensuring efficiency, reliability, and safe operation in demanding power electronic environments.
Purchase the STMicroelectronics high-speed trench gate IGBT designed for demanding power electronic applications. With a voltage rating of 600 V and a continuous current capacity of 30 A, this device ensures high efficiency in photovoltaic inverters, UPS systems, welding, and high-frequency converters. Its advanced trench gate structure provides optimized switching and conduction losses, low thermal resistance, and reliable paralleling operation. Available in various packages like DPAK, TO-220, TO-247, and TO-3P, it guarantees durability, safety, and superior performance for industrial and automation systems.
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You can download the STGP30V60DF datasheet or visit the STMICROELECTRONICS website for support.
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