STMICROELECTRONICS STGWA20HP65FB2 High-Speed Power Semiconductor
The high-speed HB2 series IGBT features a trench gate field-stop structure optimized for conduction and switching efficiency in 650 V applications. Packaged in a TO-247 long leads form, it includes a co-packaged protection diode. Designed for fast switching, welding, and power factor correction, it exhibits low Vce(sat), a maximum junction temperature of 175 °C, and robust thermal resistance. Its features enable reliable operation in high-demand industrial environments, ensuring enhanced performance and durability for power conversion and control systems.
STMICROELECTRONICS STGWA20HP65FB2 High-Speed Power Semiconductor Specifications:
Collector-emitter voltage Vce = 650 V
Continuous collector current at Tc = 25°C 40 A
Pulsed collector current 60 A
Gate-emitter voltage Vge = ±20 V
Maximum junction temperature 175 °C
Storage temperature range -55 to 150 °C
Thermal resistance junction-case 1.02 K/W
Thermal resistance junction-ambient 50 K/W
Package: TO-247 long leads
Co-packaged diode for protection
Maximum power dissipation 147 W
Reverse recovery charge 21 nc
Turn-off delay time 78 ns
Switching energy load switching 378 μJ
Operating junction temperature -55 to 175 °C
Buy the STMicroelectronics Series HB2 IGBT: STGWA20HP65FB2
Purchase the STMicroelectronics STGWA20HP65FB2 online today to benefit from advanced trench gate technology, efficient power switching, and robust thermal performance, all in a durable TO-247 long leads package. Ideal for high-speed switching, welding, and power correction projects, this IGBT ensures reliable and efficient operation in demanding industrial environments. With co-packaged diode protection and low Vce(sat), it delivers excellent conduction and switching energy characteristics. Order now and enhance your power electronics systems with proven quality and performance.
Buy STMicroelectronics STGWA20HP65FB2 now and experience unmatched reliability and performance in high-speed industrial switching applications.
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