STMICROELECTRONICS STL7DN6LF3 Automotive Dual Power MOSFET
This dual N-channel Power MOSFET in PowerFLAT 5x6 package is designed for automotive applications. Developed with STripFET F3 technology, it features low on-resistance and gate charge, enabling superior switching performance. Rated for 60 V with a typical Rds(on) of 43 mΩ, it supports a continuous drain current of 6.5 A at 25°C, and is 100% avalanche rated for reliability. The device's wettable flank package allows for easier soldering, and it is compliant with automotive safety standards, making it ideal for switching applications in demanding environments.
STMICROELECTRONICS STL7DN6LF3 Automotive Dual Power MOSFET Specifications:
Drain-source voltage: 60 V
Gate-source voltage: +20 V
Drain current (continuous) at 25°C: 6.5 A
Drain current (pulsed): 26 A
Total dissipation at 25°C: 52 W
Thermal resistance junction-case: 29 °C/W
Thermal resistance junction-PEB: 35 °C/W
Gate threshold voltage: 1 to 25 V
Rds(on): 35 to 43 mΩ
Package: PowerFLAT 5x6 double island
Maximum junction temperature: 175°C
Avalanche current: 6.5 A
Packaging: Tape and reel
Buy the STMicroelectronics Series F3 PowerMOSFET: STL7DN6LF3
Enhance your automotive electronic systems with the high-performance STL7DN6LF3 dual N-channel Power MOSFET. Featuring low on-resistance and high avalanche rating, this device delivers exceptional switching efficiency in demanding environments. Its PowerFLAT 5x6 package ensures easy mounting, while its automotive-grade quality guarantees durability and safety compliance. Suitable for high-current switching, it supports continuous drain currents of 6.5 A and pulsed currents up to 26 A. Invest in this reliable MOSFET for optimized performance and long-term operation.
Buy STMicroelectronics STL7DN6LF3 now and experience unmatched reliability and performance in automotive switching applications.
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STMICROELECTRONICS
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