The high-voltage N-channel Power MOSFET designed with MDmesh™ K5 technology offers a remarkable reduction in on-resistance and ultra-low gate charge for high-efficiency, high-power density applications. Encased in a TO-220 package, it is optimized for switching applications requiring superior power handling, low conduction losses, and excellent avalanche robustness. Its features include a 900 V drain-source voltage, 8 A continuous drain current at 25°C, and a low Rds(on) of 0.68 Ω. This device is ideal for industrial power supply, motor control, and power conversion systems demanding reliable performance and robust protection.
Order the reliable high-voltage power MOSFET designed for industrial applications. With 900 V drain-source voltage, 8 A continuous current, and ultra-low gate charge, it ensures high efficiency and power density. Encased in a durable TO-220 package, this device offers excellent avalanche robustness, low Rds(on), and superior thermal performance. Ideal for power supplies, motor controls, and power conversion systems requiring robust switching performance and long-term reliability. Purchase online for fast delivery and trusted quality.
You can click on the BUY or RFQ button to purchase STP8N90K5 from an authorized STMICROELECTRONICS distributor.
You can download the STP8N90K5 datasheet or visit the STMICROELECTRONICS website for support.
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