The IRFB9N65A is a high-performance N-channel power MOSFET designed for switch mode power supply and high-speed power switching applications. Featuring a low gate charge of 48 nC and a drain-source voltage of 650 V, it ensures efficient operation and ruggedness. The device is fully characterized for avalanche energy and current, with a maximum power dissipation of 167 W at 25°C. Its robust construction, including a TO-220AB package, allows reliable performance in demanding industrial environments, making it suitable for uninterruptible power supplies and other high-speed switching circuits.
Order the Vishay IRFB9N65A power MOSFET today for reliable, high-voltage switching in industrial power supplies and fast switching applications. With a 650 V drain-source voltage, low gate charge of 48 nC, and high power dissipation capacity of 167 W, this device ensures efficient operation under demanding conditions. Its rugged design, including a TO-220AB package, provides excellent thermal stability and durability. Perfect for uninterruptible power supplies, high-speed switching, and industrial automation, enabling you to build robust, efficient power circuits.
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You can download the IRFB9N65APBF datasheet or visit the Vishay website for support.
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