The IRFD9010PBF is a P-channel enhancement-mode power MOSFET housed in a HVMDIP package, offering very low ON-resistance, high transconductance, and rugged reliability. It is designed for reverse polarity applications and power stages with complementary N-channel devices, simplifying circuit design. Ideal for motor control, audio amplifiers, switch-mode power supplies, and pulse amplification, this device features a compact, end-stackable form factor, excellent temperature stability, and fast switching. Suitable for high-current switching, it ensures efficient operation in demanding electronic circuits.
Operating Junction Temperature Range: -55°C to +150°C
Soldering Peak Temperature: 300°C for 10s
Thermal Resistance Junction-to-Ambient: 120 °C/W
Drain-Source Breakdown Voltage: -50 V
Gate-Source Leakage: < 500 nA at 20 V
On-Resistance: Max 0.50 Ω at 10 V drain voltage
Total Gate Charge: 72 nC
Reverse Recovery Time: 75 ns
Body Diode Voltage: -55 V
Rise Time: 92 ns
Fall Time: 59 ns
Buy the Buy Vishay Siliconix IRFD9010PBF Power MOSFET Part Number IRFD9010PBF Online
Shop online now for the Vishay Siliconix IRFD9010PBF Power MOSFET, a high-performance P-channel device ideal for motor control, amplifiers, and power supplies. This MOSFET features low ON-resistance, fast switching, excellent ruggedness, and thermal stability, making it suitable for demanding applications. Its compact HVMDIP package allows easy integration into complex circuits, offering reliable reverse polarity operation. Purchase today to benefit from quick delivery and ensure optimal performance in your electronic projects and industrial applications.
Buy Vishay Siliconix IRFD9010PBF now and experience unmatched reliability and high efficiency in power switching applications.
Frequently Asked Questions
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