High-performance P-channel power MOSFET designed for switching applications, offering low on-resistance, fast switching, and high avalanche energy ratings. Suitable for surface mounting and through-hole configurations, it features a drain-source voltage of 100V, continuous drain current of 2.0A, and maximum power dissipation up to 25W. Its rugged construction ensures reliable operation under demanding conditions, with thermal resistance ratings of 110°C junction-to-ambient and 50°C junction-to-ambient when PCB mounted. Ideal for automation, power management, and motor control circuits.
On-Resistance (Rds(on)): 12 Ω at Vgs = -10 V, 2 Ω at Vgs = -4.5 V
Gate Charge (Qg): 87 nC
Body Diode Voltage: -55 V
Body Diode Reverse Recovery Time: 160 ns
Body Diode Reverse Recovery Charge: 30 pC
Soldering Peak Temperature: 260°C for 10 seconds
Operating Junction Temperature Range: -55°C to +150°C
Buy the VISHAY Series Power MOSFET: IRFR9110TRPBF
Purchase the VISHAY Series Power MOSFET IRFR9110TRPBF online today and enjoy reliable, high-efficiency power switching for your electronic projects. This low Rds(on), high avalanche energy, and fast-switching device is perfect for power management, motor control, and automation applications. Its robust construction ensures durability under demanding conditions, while the convenient surface-mount or through-hole mounting options make integration simple. Ensure excellent thermal performance and outstanding electrical characteristics—all available at your fingertips for fast delivery and competitive prices.
Order your VISHAY Series Power MOSFET IRFR9110TRPBF today and give your projects the dependable quality they deserve.
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