The Vishay Siliconix Si3483DDV is a P-Channel 30 V MOSFET with a TSOP-6 package, designed for load switching and power management in electronic devices. It features trenchFET® Gen IV technology, low on-resistance, and is 100% Rg and UIS tested for reliability. Suitable for high-speed switching applications, it operates within a temperature range of -55°C to +150°C. The device offers robust electrical characteristics, including a drain-source voltage of -30 V and a continuous drain current of 6.40 A at 25°C. Its halogen-free and lead-free packaging makes it eco-friendly and compliant with RoHS standards.
Vishay SI3483DDVT1GE3 Power MOSFET Specifications:
Drain-source voltage: -30 V
Gate-source voltage: -20/+16 V
Continuous drain current: 6.40 A at 25°C
Power dissipation: 2.80 W at 25°C
Operating temperature range: -55°C to +150°C
Maximum junction-to-ambient thermal resistance: 52°C/W (typical)
Maximum junction-to-case thermal resistance: 34°C/W (typical)
Gate threshold voltage: -2.2 V
Gate-source leakage current: < 100 nA at Vos=0 V, Veg ±20 V
Body diode forward voltage: -0.8 to 1.2 V
Body diode reverse recovery charge: 18 nC
Package: TSOP-6, lead (Pb)-free, halogen-free, RoHS compliant
Buy the Vishay Si3483DDV – Reliable P-Channel Power MOSFET for Industrial Applications
Purchase the Vishay Si3483DDV online today to enhance your electronic systems with a robust, low Rds(on) P-channel MOSFET. Perfect for load switching, power control, and high-speed switching applications, it features a trenchFET® design, wide temperature range, and eco-friendly, RoHS-compliant packaging. Reliable and tested for maximum performance, this device guarantees low on-resistance and high efficiency. Whether designing new electronics or upgrading existing systems, ordering online ensures quick delivery and professional support for your industrial and embedded applications.
Order your Vishay Series Si3483DDV high-performance MOSFET today and ensure your load switching and power management projects meet industry standards.
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