The SI7370DP-T1-E3 is a 60V N-channel enhancement-mode Power MOSFET featuring TrenchFET® technology, suitable for primary side switching and secondary synchronous rectification applications. It is packaged in a PowerPAK® device with a compact size and low 1.07mm profile, offering low thermal resistance. The MOSFET is optimized for pulse-width modulation (PWM), provides fast switching performance, and undergoes 100% gate resistor testing. Its operational temperature range spans from -55°C to 150°C, making it ideal for industrial and power management applications.
Vishay SI7370DPT1E3 N-Channel Power MOSFET Specifications:
Drain-Source Voltage: 60 V
Gate-Source Voltage: ±20 V
Continuous Drain Current: 28 A
Maximum Power Dissipation: 1.9 W at 25°C
Thermal Resistance Junction-to-Ambient: 24 °C/W
Operating Junction Temperature Range: -55°C to 150°C
Soldering Peak Temperature: 260°C
Gate Threshold Voltage: 2.0 – 4.0 V
On-State Resistance: 0.0105 – 0.013 Ω
Gate Charge: 46 – 57 nC
Total Gate Charge: 115 nC
Dynamic Rise Time: 12 – 18 ns
Fall Time: 30 – 45 ns
Reverse Recovery Time: 40 – 60 ns
Buy the Vishay Series PowerPAK SO-8: SI7370DP-T1-E3
Purchase the Vishay SI7370DP-T1-E3 online today to benefit from high efficiency, fast switching, and low thermal resistance in power management systems. This 60V N-channel MOSFET is optimized for PWM circuits, primary side switching, and synchronous rectification. Its compact PowerPAK package with a low profile of 1.07mm ensures easy integration into space-constrained designs. With rigorous testing for gate resistance and a wide operating temperature range, it guarantees durability and consistent performance for industrial applications and advanced power supplies.
Buy Vishay SI7370DP-T1-E3 now and experience unmatched reliability and performance in power switching applications.
Frequently Asked Questions
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