The Vishay Siliconix SiDR392DP is an N-Channel MOSFET designed for high efficiency power switching applications. Featuring a PowerPAK SO-8DC package, it offers a low on-resistance of 0.00062Ω at Ves = 10 V and high pulsed drain current capacity of 200 A. Suitable for synchronous rectification, DC/DC conversion, and load switching in high power density environments, this device provides excellent thermal performance and reliability, with a maximum drain-source voltage of 30 V and straightforward gate control, optimized for minimal power loss and efficient operation across a broad temperature range.
Vishay SIDR392DPT1GE3 N-Channel Power MOSFET Specifications:
Drain-source voltage: 30 V
Gate-source voltage: ±20 V
Maximum continuous drain current: 66.8 A
Pulsed drain current: 200 A
Maximum power dissipation: 2.2 W
Maximum junction temperature: -55°C to +150°C
Thermal resistance junction-to-ambient: 20°C/W
Gate threshold voltage: 1-22 V
Drain-source on-resistance: 0.00062 Ω at Ves = 10 V
Input capacitance: 9530 pF
Output capacitance: 4280 pF
Total gate charge: 75 nC
Body diode forward voltage: 0.7 V at 5 A
Reverse recovery time: 80 ns
Peak junction temperature: 150°C
Soldering peak temperature: 260°C
Buy the Buy Vishay SiDR392DP Part Number SiDR392DP Online
Purchase the Vishay SiDR392DP N-Channel Power MOSFET online today to take advantage of its low Rds(on), high pulsed current capacity, and robust power handling capabilities. Designed for synchronous rectification, DC/DC conversion, and high power density applications, this device ensures efficient operation and thermal stability across a broad temperature range. Easy to integrate into your power systems, it delivers excellent reliability and performance, optimizing your circuit design for maximum efficiency and durability.
Buy Vishay SiDR392DP now and experience unmatched reliability and performance in high power switching applications with exceptional thermal management.
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