The Vishay Siliconix SiHA11N80E is an N-channel power MOSFET in a Thin-Lead TO-220 FULLPAK package, optimized for high-current switching applications. It features a maximum drain-source voltage of 800V, very low on-resistance of 0.38Ω at 10V gate voltage, and an ultra-low gate charge of 88nC. Its robust thermal and electrical characteristics make it suitable for server power supplies, motor drives, renewable energy systems, and industrial applications. Designed to reduce switching losses and improve efficiency, it is RoHS and halogen-free compliant.
Vishay SIHA11N80EGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage: 800 V
Gate-source voltage: ±30 V
Continuous drain current at 25°C: 8 A
Drain-source on-resistance: 0.38Ω at 10V
Gate charge: 88 nC
Pulsed drain current: 32 A
Maximum power dissipation: 34 W
Operating junction temperature: -55 to +150 °C
Thermal resistance, junction-to-ambient: 65 °C/W
Storage temperature range: -55 to +150 °C
Soldering peak temperature: 300 °C for 10s
Mounting torque: 0.6 Nm
Avalanche energy rated: 226 mJ
Reverse diode forward voltage: 1.2 V at 5.5A
Reverse recovery time: 345 ns
Body diode continuous current: 12 A
Buy the Buy Vishay SiHA11N80E Part Number SIHA11N80E-GE3 Online
Order the Vishay SiHA11N80E high-voltage N-channel MOSFET online today. With a maximum drain-source voltage of 800V, low on-resistance, and ultra-low gate charge, this device is perfect for high-power switching, server and telecom power supplies, motor drives, and renewable energy systems. Its robust thermal and electrical design ensures optimal performance and efficiency. Purchase now to enhance your power management solutions with trusted Vishay quality, quick delivery, and technical support.
Buy Vishay SiHA11N80E now and experience unmatched reliability and performance in high-voltage power switching with low Rds(on).
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