The SiHA12N60E is a high-performance N-Channel Power MOSFET designed for switch mode power supplies, lighting, consumer electronics, and computing applications. It features ultra-low gate charge, low Rds(on), avalanche energy rating, and reduced switching and conduction losses, making it ideal for efficient power switching. The device is packaged in a thin-lead TO-220 FULLPAK, with a drain-source voltage of 600V, continuous drain current of 12A at 25°C, and a maximum power dissipation of 33W, operating reliably from -55°C to +150°C.
Vishay SIHA12N60EE3 High-Voltage Power MOSFET Specifications:
Drain-Source Voltage: 600 V
Continuous Drain Current: 12 A at 25°C
Maximum Power Dissipation: 33 W
Rds(on): 0.038 Ω at 10 V
Gate-Source Voltage: ±30 V
Gate Charge: 58 nC
Avalanche Energy: 117 mJ
Operating Temperature Range: -55 to +150°C
Package: TO-220 FULLPAK
Maximum Junction Temperature: +150°C
Junction-to-Ambient Thermal Resistance: 65°C/W
Junction-to-Case: 38°C/W
Soldering Temperature: 300°C for 10s
Buy the Buy Vishay MOSFET Part Number SIHA12N60E Online
Purchase the Vishay SIHA12N60E MOSFET online today to optimize your power switching designs. This high-voltage N-channel device offers superb efficiency with low gate charge, making it ideal for switch mode power supplies, lighting, and consumer electronics. Its robust 600V rating and 12A continuous drain current ensure reliable operation in demanding environments. The TO-220 FULLPAK package allows easy installation and excellent thermal management, providing an excellent solution for engineers seeking durable, efficient power components for modern electronic systems.
Buy Vishay SIHA12N60E now and experience unmatched reliability and high efficiency in switching applications with low gate charge and high voltage ratings.
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