The Si2306BDS is a N-channel 30-volt MOSFET with trench technology, low on-resistance, and high current capacity. It features a compact SOT-23 package ideal for high-efficiency switching applications. This device offers excellent thermal performance, low gate charge, and fast switching times, making it suitable for power management and load switching in various electronic circuits. Its RoHS-compliant, halogen-free options ensure environmentally friendly designs, with robust electrical characteristics for reliable operation at elevated temperatures.
Continuous Drain Current: 3.16 A at 25°C, 3.7 A at 70°C
Pulsed Drain Current: 20 A
Maximum Power Dissipation: 0.48 W at 270°C
Operating Junction Temperature: -55°C to 150°C
Maximum Junction-to-Ambient Resistance: 130 to 166 °C/W
Maximum Junction-to-Drain Resistance: 60 to 75 °C/W
Gate Threshold Voltage: 1.0 to 3.0 V
Gate-Source Capacitance: 305 pF
On-Resistance (Rds(on)): 0.082 to 0.088 Ω at Vgs=4.5 V
Gate Charge: 3.0 to 4.5 nC
Body Diode Forward Voltage: 0.8 to 1.2 V
Switching Time: Turn-On delay 7 ns, Rise time 12–18 ns
Package Type: SOT-23 3-lead small-outline
Temperature Range: -55°C to 150°C
Buy the Vishay Series Si2306BDS N-Channel MOSFET: SI2306BDST1GE3
Purchase the Vishay Si2306BDS N-Channel MOSFET online today for your power management and switching applications. With low Rds(on), high current capacity, and RoHS compliance, this device ensures efficient and reliable performance in compact packages. Its fast switching times, low gate charge, and excellent thermal dissipation make it ideal for high-speed circuits and load switching tasks. Available with halogen-free options, it delivers industry-leading quality and environmental compliance. Order now and enhance your electronics projects with trusted Vishay technology.
Order your Vishay Si2306BDS N-Channel MOSFET today and give your electronic projects the dependable quality they deserve.
Frequently Asked Questions
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