The Vishay Siliconix SiHA20N50E is an N-Channel Power MOSFET designed for efficient power switching in applications like power supplies, PFC, and LED lighting. It features a low on-resistance of just 0.184 Ω at 10 V, low gate charge, and high avalanche energy ratings, ensuring reduced switching and conduction losses. Suitable for high-current environments with a drain-source voltage of up to 500 V, it operates reliably within a temperature range of -55°C to +150°C. Its compact TO-220 FULLPAK package enables easy installation and thermal management, making it ideal for high-performance, durable electronic systems.
Vishay SIHA20N50EE3 High-Voltage Power MOSFET Specifications:
Drain-Source Voltage: 500 V
Gate-Source Voltage: ±20 V, AC 30 V
Continuous Drain Current: 19 A at 25°C, 12 A at 100°C
Pulsed Drain Current: 42 A
Maximum Power Dissipation: 34 W
Operating Junction Temperature Range: -55°C to +150°C
Maximum Power Dissipation: 34 W
Maximum Junction-to-Ambient Resistance: 65 °C/W
Maximum Junction-to-Case Resistance: 37 °C/W
Gate Charge: 92 nC
Turn-On Delay Time: 17-34 ns
Fall Time: 25-50 ns
Package: TO-220 FULLPAK, Lead (Pb)-free
Avalanche Energy: 204 mJ
Reverse Diode Forward Voltage: 12 V at 10 A
Reverse Recovery Time: 293 ns
Buy the Buy Vishay SiHA20N50E Part Number SIHA20N50EE3 Online
Experience the dependable performance of the Vishay SiHA20N50E Power MOSFET, ideal for power supply, LED lighting, and high-current switching. With a 500 V drain-source voltage, low on-resistance, and fast switching capabilities, it ensures efficient operation while reducing energy losses. Its robust TO-220 FULLPAK package simplifies installation and thermal management. Perfect for demanding applications that require high resilience and high operating temperature ranges up to 150°C. Purchase online today for reliable and durable electronic system performance.
Order your Vishay SeriesSIHA20N50E high-voltage Power MOSFET today and ensure reliable, efficient power switching for your electronic systems.
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