The Vishay Siliconix SiHA24N65EF-GE3 is an N-channel MOSFET designed for high-power applications including telecom, server, industrial, and renewable energy systems. It features a fast body diode with reduced switching losses, low gate charge, and low on-resistance. Its high maximum drain-source voltage of 650 V and continuous drain current of 15 A at 100°C make it ideal for switch mode power supplies, solar inverters, and industrial devices. RoHS and halogen-free compliant, it offers reliable performance in harsh environments with a low thermal resistance and robust avalanche energy ratings.
Vishay SIHA24N65EFGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage: 650 V
Gate-source voltage: ±30 V
Continuous drain current: 15 A at 100°C
Pulsed drain current: 65 A
Maximum power dissipation: 39 W
Linear derating factor: 0.31 W/°C
Single pulse avalanche energy: 691 mJ
Operating junction temperature range: -55 to +150 °C
Package: Thin-Lead TO-220 FULLPAK
Thermal resistance junction-to-ambient: 65°C/W
Maximum junction-to-case: 32°C/W
Drain-source on-resistance: 0.13 to 0.156 Ω
Gate charge: 81 to 122 nC
Reverse diode forward voltage: 0.9 to 1.2 V
Reverse recovery time: 151 to 288 ns
Buy the Buy Vishay SiHA24N65EF-GE3 Part Number SIHA24N65EFGE3 Online
Purchase the Vishay Siliconix SiHA24N65EF-GE3 now to ensure high efficiency and reliable switching in telecom, industrial, or renewable energy systems. This robust N-channel MOSFET features a high maximum drain-source voltage of 650 V, low gate charge for fast switching, and low on-resistance to minimize power losses. Its rugged construction includes a halogen-free, RoHS compliant package designed for demanding environments. Buying online provides quick delivery and access to technical support to help optimize your power management solutions.
Buy Vishay SiHA24N65EF-GE3 now and experience unmatched reliability and performance in high-voltage power switching applications.
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