The Vishay Siliconix SiHA25N60EFL is a high-performance N-channel power MOSFET designed for industrial, telecommunications, and renewable energy applications. It features a fast body diode, low gate charge, and reduced figure-of-merit (Ron × Qg) for minimal switching and conduction losses. With a drain-source voltage of 600V, a continuous drain current of 16A at 100°C, and avalanche energy rating, it provides robust operation in power supplies, welding, induction heating, and UPS systems. Its thermally efficient design ensures reliable operation across temperature ranges from -55°C to +150°C.
Vishay SIHA25N60EFLGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage: 600V
Gate-source voltage: ±230V
Continuous drain current: 16A at 100°C
Pulsed drain current: 61A
Maximum power dissipation: 39W
Operating junction temperature: -55°C to +150°C
Rds(on): Typical 0.146Ω at Vgs=10V, 12.5A
Drain-source breakdown voltage: 600V
Gate threshold voltage: 3.0V to 50V
Avalanche energy rating: 363mJ
Body diode forward voltage: 1.2V at 12.5A
Reverse recovery time: 138-276ns
Thermal resistance junction-to-ambient: Max 3.2°C/W
Soldering temperature: 300°C for 10s
Mounting torque: 0.6Nm
Buy the Buy Vishay Siliconix N-Channel MOSFET Part Number SIHA25N60EFL Online
Enhance your power management systems with this Vishay Siliconix high-voltage N-channel MOSFET. Featuring a drain-source voltage of 600V, low gate charge, and fast body diode, it is suitable for industrial power supplies, renewable energy applications, and more. Its robust design ensures reliable operation from -55°C to +150°C, providing low conduction and switching losses while maintaining high efficiency. Easily integrate into your systems for improved performance, safety, and long-term durability.
Buy Vishay Siliconix SIHA25N60EFL now and experience unmatched reliability and performance in high-voltage power switching.
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