The Vishay Siliconix SiHB21N80AE is a high-performance N-channel power MOSFET designed for efficient switching applications. It features low on-resistance, low gate charge, and high avalanche energy rating, making it suitable for server power supplies, industrial motor drives, and solar inverters. The device is RoHS and halogen-free, with a TO-263 package, and can handle drain-source voltages up to 800V. Its attributes include low capacitance, reduced switching losses, and robust thermal resistance, ensuring high reliability and energy efficiency in demanding environments.
Vishay SIHB21N80AEGE3 Power MOSFET Specifications:
Drain-source voltage: 800 V
Gate-source voltage: ±30 V
Continuous drain current: 4 A at 100°C
Pulsed drain current: 38 A
Maximum power dissipation: 179 W
Operating junction temperature range: -55°C to +150°C
Linear derating factor: 1.4 W/°C
Drain-source on-resistance: 0.205 Ω at 10 V
Gate charge: 72 nC
Total gate charge: 72 nC
Gate-source charge: 9 nC
Gate-drain charge: 22 nC
Avalanche energy: 127 mJ
Reverse diode forward voltage: 1.2 V at 11 A
Reverse recovery time: 400 ns
Thermal resistance junction-to-ambient: Max 62°C/W
Peak temperature: Up to 150°C
Peak diode recovery dv/dt: 39 V/μs
Buy the Vishay Series Power MOSFET: SiHB21N80AE
Purchase the Vishay SiHB21N80AE now to benefit from a high-voltage N-channel MOSFET with low Rds(on), excellent avalanche energy, and robust thermal performance. Ideal for power supplies, industrial motor drives, and renewable energy systems, this device ensures energy-efficient operation and high reliability in demanding environments. Its RoHS compliance and TO-263 package make it suitable for a wide range of applications, providing durable and cost-effective power management solutions for your project or system upgrade.
Buy Vishay SiHB21N80AE now and experience unmatched reliability and high efficiency in power switching applications.
Frequently Asked Questions
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