The Vishay Siliconix SIHA6N80AEGE3 is a high-voltage N-channel power MOSFET designed for switching and energy management applications. Featuring a low on-resistance and gate charge, it ensures efficient conduction and reduced switching losses. Suitable for server and telecom power supplies, switch mode power supplies, lighting, industrial equipment, motor drives, and renewable energy systems, it includes integrated ESD protection and is RoHS compliant. Designed with a Thin-Lead TO-220 FULLPAK package, it delivers robust performance with a maximum drain-source voltage of 800 V and a power dissipation of 30 W, operating effectively across a temperature range of -55°C to +150°C.
Operating junction temperature range: -55°C to +150°C
Gate-source voltage: ±30 V
Continuous drain current at 25°C: 5 A
Pulsed drain current: 10 A
Total gate charge: 15 nC
Gate threshold voltage: 2 to 4 V
On-resistance: 0.826 Ω (typical at Vgs=10V)
Avalanche energy: 20.3 mJ
Body diode reverse recovery time: 285 ns
Soldering temperature: 260°C for 10 seconds
Mounting torque: 0.6 Nm
Thermal resistance junction-to-ambient: 65°C/W
RoHS compliant, halogen-free
Buy the Vishay Series Power MOSFET: SIHA6N80AEGE3
Purchase the Vishay Series Power MOSFET SIHA6N80AEGE3 now to enhance your industrial and power supply designs. Its high drain-source voltage of 800 V and low on-resistance deliver superior efficiency, reducing energy loss in switch mode power supplies, lighting, motor drives, and renewable energy systems. Featuring integrated ESD protection and RoHS compliance, this robust component handles demanding applications with ease. Buy online today and benefit from fast delivery, quality assurance, and competitive pricing, ensuring your project maintains optimal performance and reliability.
Order your Vishay Series Power MOSFET SIHA6N80AEGE3 today and ensure reliable performance in high-voltage switching applications.
Frequently Asked Questions
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