The SiHB100N60E is an advanced N-Channel Power MOSFET designed by Vishay Siliconix, featuring the latest generation E series technology in a TO-263 package. This device offers low figure-of-merit for reduced switching and conduction losses, high avalanche energy rating, and RoHS compliance. It is ideal for applications such as server and telecom power supplies, switch mode power supplies, industrial motor drives, and solar inverters. The MOSFET provides high current capacity, low on-resistance, and robust thermal characteristics, making it suitable for high-power operational requirements.
Vishay SIHB100N60EGE3 N-Channel Power MOSFET Specifications:
Drain-source voltage: 600 V
Gate-source voltage: +30 V / -30 V
Continuous drain current: 19 A at 100°C
Pulsed drain current: 73 A
Maximum power dissipation: 208 W
Operating junction temperature range: -55°C to +150°C
Maximum junction-to-ambient thermal resistance: 62 °C/W
Maximum junction-to-case (drain) thermal resistance: 0.6 °C/W
Reverse diode forward voltage: 1.2 V at 183 A
Gate charge: 50 nC
Output capacitance (Coss): 84 pF
Avalanche energy: 226 mJ
Switching times: Rise time 6 ns, Fall time 20 ns
Body diode reverse recovery charge: 102 μC
Buy the Vishay Series E Power MOSFET: SIHB100N60E
Purchase the Vishay SIHB100N60E online today to benefit from its high efficiency, low on-resistance, and robust thermal performance. Designed for power supplies, motor drives, and industrial systems, this MOSFET ensures reliable operation under demanding conditions. Its excellent avalanche energy rating and low gate charge make it an ideal choice for switch mode power supplies, solar inverters, and high-frequency switching applications. Order now to enhance your projects with this high-quality, RoHS-compliant power MOSFET engineered for durability and efficiency.
Get Vishay SIHB100N60E today—built for precision and long-lasting durability in high-power industrial applications.
Frequently Asked Questions
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