The Vishay Siliconix SIHB120N60E is a reliable N-channel power MOSFET designed for high-voltage switching applications. It features a drain-source voltage rating of 600V, a continuous drain current of 16A at 100°C, low on-state resistance, and fast switching capabilities suitable for server power supplies, motor drives, and solar inverters. The device operates within a temperature range of -55°C to +150°C, with a compact D2PAK package, RoHS compliance, and avalanche energy rating, ensuring efficiency and durability in demanding industrial applications.
Vishay SIHB120N60ET5GE3 High-Voltage Power MOSFET Specifications:
Drain-source Voltage: 600V
Gate-source Voltage: +30V
Continuous Drain Current: 16A at 100°C
Pulsed Drain Current: 66A
Maximum Power Dissipation: 179W
Maximum Junction Temperature: -55°C to +150°C
Avalanche Energy: 88mJ
Gate Threshold Voltage: 3.0V to 5.0V
Drain-source On-Resistance: 0.104Ω (max at 10V)
Capacitances: Coss 72pF, Css 1562pF
Gate Charge (Qg): 45nC
Package: D2PAK (TO-263)
RoHS compliant
Operating Junction and Storage Temperature Range: -55°C to +150°C
Peak Diode Forward Voltage: 1.2V
Body Diode Reverse Recovery Time: 322ns to 870ns
Buy the VISHAY SIHB120N60E – Reliable MOSFET for Industrial Applications
Purchase the Vishay Siliconix SIHB120N60E power MOSFET online today to ensure your industrial applications are equipped with a high-voltage, durable, and efficient switching device. Its excellent electrical characteristics, robust thermal performance, and RoHS compliance make it ideal for server power supplies, motor drives, induction heating, and solar inverters. With a maximum drain-source voltage of 600V, low on-resistance, fast switching capability, and a compact D2PAK package, this MOSFET guarantees reliable operation in demanding environments. Secure your stock now for dependable industrial performance.
Order your Vishay Siliconix SIHB120N60E power MOSFET today and enhance your industrial power switching projects with reliable high-voltage performance.
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