The Vishay Siliconix SiHB15N50E is an N-Channel Power MOSFET designed for high-voltage and low Rds(on) applications, including power supplies, LED lighting, and switching regulators. With a drain-source voltage of 500V and a continuous drain current of 9.2A at 100°C, it features low gate charge, fast switching capabilities, and avalanche energy rating of 136mJ. The TO-263 package allows for efficient heat dissipation, making it suitable for hard switched topologies and various consumer electronics and computing applications.
Vishay SIHB15N50EGE3 High-Voltage Power MOSFET Specifications:
Drain-Source Voltage: 500 V
Gate-Source Voltage: +30 V
Continuous Drain Current: 9.2 A at 100°C
Pulsed Drain Current: 28 A
Maximum Power Dissipation: 156 W
Drain-Source On-Resistance: 0.243 Ω (typ.) at 10V
Gate Charge: 66 nC
Avalanche Energy: 136 mJ
Maximum Junction Temperature: -65°C to +150°C
Package: D2PAK (TO-263)
Thermal Resistance Junction-to-Ambient: 62 °C/W
Soldering Temperature (Peak for 10s): 300°C
Storage Temperature Range: -65°C to +150°C
Buy the Vishay Series Power MOSFET: SiHB15N50E
Get the Vishay Siliconix SiHB15N50E N-Channel Power MOSFET online today for optimal performance in power supplies, LED lighting, and switch mode power applications. This high-quality component features a drain-source voltage of 500V, continuous drain current of 9.2A at 100°C, low gate charge of 66nC, and avalanche energy of 136mJ, making it ideal for high-efficiency, low-loss switching in consumer electronics and computing devices. Purchase now to enhance your project’s reliability with Vishay’s proven power semiconductor technology.
Order your Vishay Siliconix SiHB15N50E high-voltage MOSFET today and ensure reliable, low-loss switching for your power management applications.
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