The Vishay Siliconix SIHB17N80AE is a high-voltage N-Channel Power MOSFET designed for use in server, telecom, and industrial power supplies. It features low conduction and switching losses, a low figure-of-merit Ron x Qg, and avalanche energy rating. Its specifications include a drain-source voltage of 800 V, continuous drain current of 10 A at 100°C, and a maximum power dissipation of 179 W. The device is RoHS and halogen-free, suitable for high-speed switching applications like LED lighting, motor drives, and solar inverters, with a compact TO-263 package.
Vishay SIHB17N80AEGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage: 800 V
Continuous drain current: 10 A at 100°C
Maximum power dissipation: 179 W
Gate-source voltage: ±30 V
Maximum junction temperature: -55°C to +150°C
Thermal resistance junction-to-ambient: 62 °C/W
Drain-source on-state resistance: 0.0250 to 0.0290 Ω
Avalanche energy: 127 mJ
Gate charge: 62 nC
Package: D2PAK (TO-263)
RoHS and halogen-free compliant
Soldering temperature: peak 260°C for 10s
Reverse diode forward voltage: 1.2 V at 8.5A
Buy the Buy Vishay SIHB17N80AE Part Number SIHB17N80AE-GE3 Online
Purchase the Vishay SIHB17N80AE high-voltage N-channel MOSFET online today to ensure high efficiency and low losses in your power conversion projects. This robust device features an 800V drain-source voltage, 10A continuous drain current, and a maximum power dissipation of 179W. Its compact D2PAK (TO-263) package enables easy integration and excellent thermal management. Suitable for server power supplies, motor drives, and solar inverters, this MOSFET ensures reliable performance and compliance with RoHS and halogen-free standards for a greener environment.
Order your Vishay SeriesSIHB17N80AE high-voltage power MOSFET today and boost your power supply efficiency with reliable, high-voltage switching performance.
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