The Vishay SiHB186N60EF is a high-voltage N-channel power MOSFET designed for a wide range of industrial applications including server and telecom power supplies, motor drives, battery chargers, and solar inverters. Featuring fast switching, low on-resistance, and avalanche energy rating, it ensures efficient power management and reliability. The TO-263 package provides excellent thermal performance. This device is RoHS compliant, halogen-free, and ideal for high-voltage switching and inductive load applications, delivering excellent efficiency and durability in demanding environments.
Vishay SIHB186N60EFGE3 Power MOSFET Specifications:
Drain-source voltage Vos: 600 V
Gate-source voltage Ves: ±30 V
Continuous drain current at 25°C: 8.4 A
Continuous drain current at 100°C: 5.3 A
Pulsed drain current: 43 A
Maximum power dissipation: 156 W
Operating junction temperature: -55 to +150°C
Gate threshold voltage: 3.0 to 5.0 V
Static drain-source resistance: 0.168 to 0.193 Ω
Gate charge: 24 to 32 nC
Total gate charge (Qg): 24 nC
Drain-source breakdown voltage: 600 V
Avalanche energy: 24 mJ
Thermal resistance junction-to-ambient: 65°C/W
Package: TO-263 (D2PAK full pack)
RoHS compliant, halogen-free, lead-free
Buy the VISHAY SIHB186N60EF – Reliable Power MOSFET for Industrial Applications
Order the Vishay SiHB186N60EF power MOSFET today and unlock high-voltage efficiency for your industrial, renewable energy, and motor control needs. With its low Rds(on), fast switching, and avalanche energy rating, this device ensures optimal performance and durability in demanding environments. Ideal for server power supplies, solar inverters, and induction heating systems, it provides excellent thermal stability and reliability. Purchase online now to streamline your manufacturing process and ensure top-quality power management in your projects.
Buy Vishay SiHB186N60EF now and experience unmatched reliability and performance in high-voltage power switching applications.
Frequently Asked Questions
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